2N2369A

2N2369A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2369A is an epitaxial planar NPN Silicon Transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL VCBO VCES VCEO VEBO IC ICM PD PD TJ, Tstg ΘJA ΘJC otherwise noted) MIN UNITS V V V V mA mA mW W °C °C/W °C/W Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO BVCBO BVCES BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE 40 40 15 4.5 200 500 360 1.2 -65 to +200 486 146 CHARACTERISTICS: (TA=25°C unless TEST CONDITIONS VCB=20V VCB=20V, TA=150°C IC=10µA IC=10µA IC=10mA IE=10µA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA, TA=125°C IC=30mA, IB=3.0mA IC=100mA, IB=10mA IC=10mA, IB=1.0mA IC=30mA, IB=3.0mA IC=100mA, IB=10mA VCE=0.35V, IC=10mA VCE=0.35V, IC=10mA, TA=–55°C VCE=0.4V, IC=30mA VCE=1.0V, IC=100mA MAX 400 30 40 40 15 4.5 200 300 250 500 850 1.15 1.6 120 700 UNITS nA µA V V V V mV mV mV mV mV V V 40 20 30 20 R0 (10-March 2011) 2N2369A NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX fT VCE=10V, IC=10mA, f=100MHz 500 Cob VCB=5.0V, IE=0, f=140kHz 4.0 ton VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 12 toff VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 18 ts VCC=10V, IC=10mA, IB1=IB2=10mA 13 UNITS MHz pF ns ns ns TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (10-March 2011) w w w. c e n t r a l s e m i . c o m