2N3637

2N3637 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3637 is a PNP Silicon Transistor, mounted in a hermetically sealed TO-39 package, designed for general purpose amplifier and high voltage switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC otherwise noted) MIN 175 175 5.0 1.0 1.0 5.0 -65 to +200 175 35 UNITS V V V A W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS ICBO VCB=100V IEBO VEB=3.0V BVCBO IC=100μA BVCEO IC=10mA BVEBO IE=10μA VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=50mA, IB=5.0mA VBE(SAT) IC=10mA, IB=1.0mA VBE(SAT) IC=50mA, IB=5.0mA hFE VCE=10V, IC=0.1mA hFE VCE=10V, IC=1.0mA hFE VCE=10V, IC=10mA hFE VCE=10V, IC=50mA hFE VCE=10V, IC=150mA fT VCE=30V, IC=30mA, f=100MHz Cob VCB=20V, IE=0, f=1.0MHz Cib VEB=1.0V, IC=0, f=1.0MHz ton VCC=100V, VBE=4.0V, IC=50mA, IB1=IB2=5.0mA toff VCC=100V, VBE=4.0V, IC=50mA, IB1=IB2=5.0mA MAX 100 50 175 175 5.0 0.3 0.5 0.8 0.9 0.65 80 90 100 100 50 200 UNITS nA nA V V V V V V V 300 MHz pF pF ns ns 10 75 400 600 R0 (22-November 2010) 2N3637 PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX hie VCE=10V, IC=10mA, f=1.0kHz 200 1200 hre VCE=10V, IC=10mA, f=1.0kHz 3.0 hfe VCE=10V, IC=10mA, f=1.0kHz 80 320 hoe VCE=10V, IC=10mA, f=1.0kHz 200 NF VCE=10V, IC=0.5mA, f=1.0kHz, RS=1.0kΩ 3.0 UNITS Ω x10-4 μS dB TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (22-November 2010 w w w. c e n t r a l s e m i . c o m