2N3724 2N3725 2N3725A NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3724, 2N3725, 2N3725A types are Silicon NPN Planar Epitaxial Transistors designed for high voltage, high current, high speed switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC ICM PD PD TJ, Tstg 2N3724 50 30 2N3725 2N3725A 80 80 50 50 6.0 1.2 1.75 0.8 1.0 3.5 5.0 -65 to +200 UNITS V V V A A W W °C
0.8 3.5
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3724 2N3725 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IB VCE=50V 10 IB VCE=80V 10 ICBO VCB=40V 1.7 ICBO VCB=40V, TA=100°C 120 ICBO VCB=60V 1.7 ICBO VCB=60V, TA=100°C 120 ICES VCE=50V 10 ICES VCE=80V 10 BVCBO IC=10µA 50 80 BVCES IC=10µA 50 80 BVCEO IC=10mA 30 50 BVEBO IE=10µA 6.0 6.0 VCE(SAT) IC=10mA, IB=1.0mA 0.25 0.25 VCE(SAT) IC=100mA, IB=10mA 0.20 0.26 VCE(SAT) IC=300mA, IB=30mA 0.32 0.40 VCE(SAT) IC=500mA, IB=50mA 0.42 0.52 VCE(SAT) IC=800mA, IB=80mA 0.65 0.80 VCE(SAT) IC=1.0A, IB=100mA 0.75 0.95 VBE(SAT) IC=10mA, IB=1.0mA 0.76 0.76 VBE(SAT) IC=100mA, IB=10mA 0.86 0.86 VBE(SAT) IC=300mA, IB=30mA 1.1 1.1 VBE(SAT) IC=500mA, IB=50mA 0.80 1.1 0.80 1.1 VBE(SAT) IC=800mA, IB=80mA 1.5 1.5 VBE(SAT) IC=1.0A, IB=100mA 1.7 1.7
2N3725A MIN MAX 10 0.5 50 10 80 80 50 6.0 0.25 0.26 0.40 0.52 0.80 0.90 0.76 0.86 1.0 0.80 1.1 1.3 0.90 1.4
UNITS µA µA µA µA µA µA µA µA V V V V V V V V V V V V V V V V
R1 (5-December 2010)
2N3724 2N3725 2N3725A NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) 2N3724 2N3725 SYMBOL TEST CONDITIONS MIN MAX MIN MAX hFE VCE=1.0V, IC=10mA 30 30 hFE VCE=1.0V, IC=100mA 60 150 60 150 hFE VCE=1.0V, IC=300mA 40 40 hFE VCE=1.0V, IC=500mA 35 35 hFE VCE=2.0V, IC=800mA 25 20 hFE VCE=5.0V, IC=1.0A 30 25 hFE VCE=5.0V, IC=1.5A fT VCE=10V, IC=50mA, f=100MHz 300 300 Cob VCB=10V, IE=0, f=1.0MHz 12 10 Cib VEB=0.5V, IC=0, f=1.0MHz 55 55 td VCC=30V, IC=500mA, IB1=50mA 10 10 tr VCC=30V, IC=500mA, IB1=50mA 30 30 ton VCC=30V, IC=500mA, IB1=50mA 35 35 ts VCC=30V, IC=500mA, IB1=IB2=50mA 50 50 tf VCC=30V, IC=500mA, IB1=IB2=50mA 25 25 toff VCC=30V, IC=500mA, IB1=IB2=50mA 60 60 ton VCC=30V, IC=1.0A, IB1=IB2=100mA toff VCC=30V, IC=1.0A, IB1=IB2=100mA -
2N3725A MIN MAX 30 60 150 40 35 25 25 20 300 10 55 10 30 35 50 25 60 50 50
UNITS
MHz pF pF ns ns ns ns ns ns ns ns
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER
R1 (5-December 2010)
w w w. c e n t r a l s e m i . c o m
