2N3740_11

2N3740 2N3741 2N3740A 2N3741A w w w. c e n t r a l s e m i . c o m PNP SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3740 Series types are PNP Silicon Power Transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg 2N3740 2N3740A 60 60 2N3741 2N3741A 80 80 7.0 4.0 10 2.0 25 -65 to +200 MAX 100 100 1.0 0.5 1.0 0.5 100 100 1.0 1.0 1.0 1.0 0.5 100 UNITS V V V A A A W °C UNITS μA nA mA mA mA mA μA nA mA μA mA μA mA nA V V V V ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEO, VBE=1.5V (2N3740, 2N3741) ICEV VCE=Rated VCEO, VBE=1.5V (2N3740A, 2N3741A) ICEV VCE=40V, VBE=1.5V, TC=150°C (2N3740) ICEV VCE=40V, VBE=1.5V, TC=150°C (2N3740A) ICEV VCE=60V, VBE=1.5V, TC=150°C (2N3741) ICEV VCE=60V, VBE=1.5V, TC=150°C (2N3741A) ICBO VCB=Rated VCBO (2N3740, 2N3741) ICBO VCB=Rated VCBO (2N3740A, 2N3741A) ICEO VCE=40V (2N3740) ICEO VCE=40V (2N3740A) ICEO VCE=60V (2N3741) ICEO VCE=60V (2N3741A) IEBO VEB=7.0V (2N3740, 2N3741) IEBO VEB=7.0V (2N3740A, 2N3741A) BVCEO IC=100mA (2N3740, 2N3740A) 60 BVCEO IC=100mA (2N3741, 2N3741A) 80 VCE(SAT) IC=1.0A, IB=125mA VBE(ON) VCE=1.0V, IC=250mA hFE VCE=1.0V, IC=100mA 40 hFE VCE=1.0V, IC=250mA 30 hFE VCE=1.0V, IC=500mA 20 hFE VCE=1.0V, IC=1.0A 10 hfe VCE=10V, IC=50mA, f=1.0kHz 25 fT VCE=10V, IC=100mA, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=100kHz 0.6 1.0 200 100 MHz pF R1 (9-September 2011) 2N3740 2N3741 2N3740A 2N3741A PNP SILICON POWER TRANSISTOR TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (9-September 2011) w w w. c e n t r a l s e m i . c o m