2N3819
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SILICON
N-CHANNEL JFET
The CENTRAL SEMICONDUCTOR 2N3819 is a silicon
N-Channel JFET designed for RF amplifier and mixer
applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Drain-Gate Voltage
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
VDG
VDS
VGS
IG
Continuous Gate Current
Power Dissipation
Operating and Storage Junction Temperature
PD
TJ, Tstg
ELECTRICAL
SYMBOL
IGSS
IGSS
CHARACTERISTICS: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VGS=15V
VGS=15V, TA=100°C
IDSS
VDS=15V
IG=1.0μA
BVGSS
VGS(OFF)
VGS
|Yfs|
|Yfs|
|Yos|
VDS=15V,
VDS=15V,
2.0
25
UNITS
V
25
V
25
V
10
mA
360
mW
-65 to +150
°C
MAX
2.0
UNITS
nA
2.0
μA
20
mA
25
ID=2.0nA
ID=200μA
VDS=15V, VGS=0, f=1.0MHz
VDS=15V, VGS=0, f=100MHz
V
8.0
V
0.5
7.5
V
2.0
6.5
mS
1.6
mS
VGS=0, f=1.0kHz
VGS=0, f=1.0MHz
50
μS
Ciss
VDS=15V,
VDS=15V,
8.0
pF
Crss
VDS=15V, VGS=0, f=1.0MHz
4.0
pF
R1 (9-January 2014)
2N3819
SILICON
N-CHANNEL JFET
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Drain
2) Gate
3) Source
MARKING:
FULL PART NUMBER
TYPICAL ELECTRICAL CHARACTERISTICS
R1 (9-January 2014)
w w w. c e n t r a l s e m i . c o m
2N3819
SILICON
N-CHANNEL JFET
R1 (9-January 2014)
w w w. c e n t r a l s e m i . c o m
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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