2N3866A

2N3866 2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance VEBO IC IB PD TJ, Tstg ΘJC 55 30 3.5 0.4 2.0 5.0 -65 to +200 35 MAX 20 0.1 5.0 0.1 55 55 30 3.5 1.0 10 25 5.0 500 800 3.0 10 45 200 200 UNITS V V V A A W °C °C/W UNITS μA mA mA mA V V V V V ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO VCE=28V ICEV ICEV IEBO BVCER BVCBO BVCEO BVEBO VCE(SAT) hFE hFE hFE fT fT Cob GPE η VCE=55V, VBE(OFF)=1.5V VCE=30V, VBE(OFF)=1.5V, TC=200°C VEB=3.5V IC=5.0mA, RBE=10Ω IC=500μA IC=5.0mA IE=100μA IC=100mA, IB=20mA VCE=5.0V, IC=50mA (2N3866) VCE=5.0V, IC=50mA (2N3866A) VCE=5.0V, IC=360mA VCE=15V, IC=50mA, f=200MHz (2N3866) VCE=15V, IC=50mA, f=200MHz (2N3866A) VCB=28V, IE=0, f=1.0MHz VCC=28V, Pout=1.0W, f=400MHz (Figure 1) VCC=28V, Pout=1.0W, f=400MHz (Figure 1) MHz MHz pF dB % R2 (15-September 2010) 2N3866 2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR Figure 1. 400MHz Test Circuit TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (15-September 2010) w w w. c e n t r a l s e m i . c o m