2N5195

2N5193 2N5194 2N5195 PNP SILICON POWER TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5193 Series types are Silicon PNP Power Transistors, manufactured by the epitaxial base process, designed for medium power amplifier and switching applications. These devices are complementary to the NPN 2N5190 Series types. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance (Junction to Case) ELECTRICAL CHARACTERISTICS: (TC=25°C) SYMBOL TEST CONDITIONS ICBO VCB=Rated VCBO ICEX ICEO IEBO BVCEO BVCEO BVCEO VCE(SAT) VCE(SAT) VBE(ON) hFE hFE hFE hFE fT VCE=Rated VCEO, VEB=1.5V VCE=Rated VCEO VEB=5.0V IC=100mA (2N5193) IC=100mA (2N5194) IC=100mA (2N5195) IC=1.5A, IB=150mA IC=4.0A, IB=1.0A VCE=2.0V, IC=1.5A VCE=2.0V, VCE=2.0V, IC=1.5A (2N5193, 2N5194) IC=1.5A (2N5195) 25 20 10 7.0 2.0 MHz 40 60 80 0.6 1.4 1.2 100 80 SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJC 2N5193 40 40 2N5194 60 60 5.0 4.0 1.0 40 -65 to +150 3.12 2N5195 80 80 UNITS V V V A A W °C °C/W MIN MAX 100 100 1.0 1.0 UNITS μA μA mA mA V V V V V V VCE=2.0V, IC=4.0A (2N5193, 2N5194) VCE=2.0V, IC=4.0A (2N5195) VCE=10V, IC=1.0A, f=1.0MHz R1 (10-February 2009) Central TM Semiconductor Corp. 2N5193 2N5194 2N5195 PNP SILICON POWER TRANSISTORS TO-126 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING: FULL PART NUMBER R1 (10-February 2009)