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2N5333

2N5333

  • 厂商:

    CENTRAL

  • 封装:

  • 描述:

    2N5333 - PNP SILICON POWER TRANSISTOR - Central Semiconductor Corp

  • 数据手册
  • 价格&库存
2N5333 数据手册
Central 2N5333 PNP SILICON POWER TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5333 is a PNP Silicon Power Transistor manufactured by the epitaxial planar process, mounted in a hermetically sealed metal case, designed for amplifier and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (tp < 0.3ms) Continuous Base Current Power Dissipation (TA=25°C) Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJA 100 80 6.0 2.0 5.0 1.0 1.0 -65 to +200 175 UNITS V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICES VCE=90V ICES ICEO IEBO IEBO BVCEO VCE(SAT) VCE(SAT) VBE(ON) hFE hFE hfe fT ton toff VCE=50V (TC=150°C) VCE=40V VEB=4.0V VEB=6.0V IC=30mA IC=1.0A, IB=100mA IC=2.0A, IB=400mA VCE=4.0V, IC=2.0A VCE=4.0V, VCE=4.0V, IC=1.0A IC=2.0A 30 10 30 30 150 450 80 MAX 10 500 50 1.0 100 0.45 1.0 1.5 120 UNITS μA μA μA μA μA V V V V { VCE=10V, IC=1.0A, f=1KHz VCE=10V, IC=1.0A IC=1.0A, IB1=IB2=100mA VBE(OFF)=3.7V, RL=20Ω } MHz ns ns R0 (25-September 2008) Central TM Semiconductor Corp. 2N5333 NPN SILICON POWER TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) BASE 3) COLLECTOR (case) MARKING: FULL PART NUMBER R0 (25-September 2008)
2N5333 价格&库存

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