2N6317

2N6315 2N6317 2N6316 2N6318 NPN PNP w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6315 SERIES types are complementary Silicon Power Transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6315 2N6317 60 60 5.0 7.0 15 2.0 90 -65 to +200 1.95 2N6316 2N6318 80 80 UNITS V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEV VCE=Rated VCEO, VBE=1.5V ICEV ICEO IEBO BVCEO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE hfe fT VCE=Rated VCEO, VBE=1.5V, TC=150°C VCE=1/2 Rated VCEO VEB=5.0V IC=100mA, (2N6315, 2N6317) IC=100mA, (2N6316, 2N6318) IC=4.0A, IB=0.4A IC=7.0A, IB=1.75A IC=7.0A, IB=1.75A VCE=4.0V, IC=2.5A VCE=4.0V, IC=0.5A VCE=4.0V, IC=2.5A VCE=4.0V, IC=7.0A VCE=4.0V, IC=500mA, f=1.0kHz VCE=10V, IC=250mA, f=1.0MHz 35 20 4.0 20 4.0 60 80 MAX 0.25 0.25 2.0 0.50 1.0 UNITS mA mA mA mA mA V V 1.0 2.0 2.5 1.5 100 V V V V MHz R2 (6-April 2011) 2N6315 2N6317 2N6316 2N6318 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX Cob VCB=10V, IE=0, f=1.0MHz, (2N6315, 2N6316) 200 Cob tr toff VCB=10V, IE=0, f=1.0MHz, (2N6317, 2N6318) VCC=30V, IC=2.5A IB1=IB2=0.25A VCC=30V, IC=2.5A IB1=IB2=0.25A 300 0.7 1.8 UNITS pF pF µs µs TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R2 (6-April 2011) w w w. c e n t r a l s e m i . c o m