BAS28_10

BAS28 SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded SOT-143 surface mount case. This device is designed for high speed switching applications. MARKING CODE: A61 or JTW   SOT-143 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0ms Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF IFRM IFSM IFSM IFSM PD TJ, Tstg ΘJA 75 85 250 500 4.0 2.0 1.0 350 -65 to +150 357 UNITS V V mA mA A A A mW °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR IR IR VF VF VF VF CT trr Qs VFR VR=25V, TA=150°C VR=75V VR=75V, TA=150°C IF=1.0mA IF=10mA IF=50mA IF=150mA VR=0, f=1.0MHz IF=IR=10mA, Irr=1.0mA, RL=100Ω IF=10mA, VR=5.0V, RL=500Ω IF=10mA, tr=20ns 30 1.0 50 715 855 1.00 1.25 2.0 6.0 45 1.75 UNITS μA μA μA mV mV V V pF ns pC V R7 (20-October 2010) BAS28 SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-143 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) CATHODE D1 2) CATHODE D2 3) ANODE D2 4) ANODE D1 MARKING CODE: A61 or JTW R7 (20-October 2010) w w w. c e n t r a l s e m i . c o m