BAW100

BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is designed for high speed switching applications. • The BAW100G is Halogen Free by design. MARKING CODES: BAW100: CJSS BAW100G: CJSG SYMBOL VR VRRM IF IFRM IFSM IFSM IFSM PD TJ, Tstg ΘJA 75 85 250 500 4.0 2.0 1.0 350 -65 to +150 357 UNITS V V mA mA A A A mW °C °C/W UNITS μA μA μA V 715 855 1.00 1.25 2.0 6.0 mV mV V V pF ns SOT-143 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0ms Peak Forward Surge Current, tp=1.0ms Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR IR IR BVR VF VF VF VF CT trr VR=25V, TA=150°C VR=75V VR=75V, TA=150°C IR=100μA IF=1.0mA IF=10mA IF=50mA IF=150mA VR=0, f=1.0MHz IF=IR=10mA, RL=100Ω, Rec. to 1.0mA 85 30 1.0 50 R4 (20-November 2009) BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-143 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) ANODE D1 2) ANODE D2 3) CATHODE D2 4) CATHODE D1 MARKING CODES: BAW100: CJSS BAW100G: CJSG R4 (20-November 2009) w w w. c e n t r a l s e m i . c o m