BAW101_11

BAW101 SURFACE MOUNT DUAL, ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW101 consists of two electrically islolated high voltage switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is designed for applications requiring dual high voltage switching diodes. MARKING CODES: CJP or BAW101 SOT-143 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF IFRM IFSM PD TJ, Tstg ΘJA 300 300 200 400 4.5 350 -65 to +150 357 UNITS V V mA mA A mW °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR IR BVR VF CT trr VR=250V VR=250V, TA=150°C IR=100μA IF=100mA VR=0, f=1.0MHz IF=IR=30mA, Irr=3.0mA, RL=100Ω 300 0.9 1.3 5.0 50 150 50 UNITS nA μA V V pF ns R7 (8-February 2011) BAW101 SURFACE MOUNT DUAL, ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES SOT-143 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Cathode D1 2) Cathode D2 3) Anode D2 4) Anode D1 MARKING CODES: CJP or BAW101 R7 (8-February 2011) w w w. c e n t r a l s e m i . c o m