BC107,A,B
BC108B,C
BC109B,C
NPN SILICON TRANSISTOR
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC107, BC108,
BC109 series types are small signal NPN silicon
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
ICBO
ICBO
BVCEO
BVCEO
BVEBO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(ON)
VBE(ON)
hFE
hFE
hFE
hFE
hFE
hFE
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
JC
BC107
50
45
6.0
CHARACTERISTICS: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=45V (BC107)
VCB=45V, TA=125°C (BC107)
VCB=25V (BC108, BC109)
VCB=25V, TA=125°C (BC108, BC109)
IC=2.0mA (BC107)
45
IC=2.0mA (BC108, BC109)
25
IE=10μA (BC107)
6.0
IE=10μA (BC108, BC109)
5.0
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
VCE=5.0V, IC=2.0mA
0.55
VCE=5.0V, IC=10mA
VCE=5.0V, IC=10μA (BC107B, BC108B, BC109B)
40
VCE=5.0V, IC=10μA (BC108C, BC109C)
100
VCE=5.0V, IC=2.0mA (BC107)
110
VCE=5.0V, IC=2.0mA (BC107A)
110
VCE=5.0V, IC=2.0mA (BC107B, BC108B, BC109B) 200
VCE=5.0V, IC=2.0mA (BC108C, BC109C)
420
BC108
BC109
30
30
25
25
5.0
5.0
200
600
-65 to +200
175
TYP
0.7
1.0
UNITS
V
V
V
mA
mW
°C
°C/W
MAX
15
4.0
15
4.0
0.25
0.6
0.83
1.05
0.7
0.77
UNITS
nA
μA
nA
μA
V
V
V
V
V
V
V
V
V
V
450
220
450
800
R1 (16-August 2012)
BC107,A,B
BC108B,C
BC109B,C
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
hfe
VCE=5.0V, IC=2.0mA, f=1.0kHz (BC107)
125
hfe
VCE=5.0V, IC=2.0mA, f=1.0kHz (BC107A)
125
hfe
VCE=5.0V, IC=2.0mA, f=1.0kHz (BC107B, BC108B, BC109B)
240
hfe
VCE=5.0V, IC=2.0mA, f=1.0kHz (BC108C)
hfe
VCE=5.0V, IC=2.0mA, f=1.0kHz (BC109C)
450
fT
VCE=5.0V, IC=10mA, f=100MHz
150
Cob
VCB=10V, IE=0, f=1.0MHz
NF
VCE=5.0V, IC=0.2mA, Rg=2.0kΩ, B=200Hz, f=1.0kHz (BC107, BC108)
NF
VCE=5.0V, IC=0.2mA, Rg=2.0kΩ, B=200Hz, f=1.0kHz (BC109)
TYP
MAX
500
260
500
UNITS
500
900
4.5
10
MHz
pF
dB
4.0
dB
TO-18 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R1 (16-August 2012)
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OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
Central’s operations team provides the highest level of support to insure product is delivered on-time.
• Supply management (Customer portals)
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Central’s applications engineering team is ready to discuss your design challenges. Just ask.
• Free quick ship samples (2nd day air)
• Special wafer diffusions
• Online technical data and parametric search
• PbSn plating options
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• Application and design sample kits
• Customer specific screening
• Custom product and package development
• Up-screening capabilities
REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
CONTACT US
Corporate Headquarters & Customer Support Team
Central Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Main Tel: (631) 435-1110
Main Fax: (631) 435-1824
Support Team Fax: (631) 435-3388
www.centralsemi.com
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which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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