BC846W

BC846W

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    BC846W - SURFACE MOUNT NPN SILICON TRANSISTOR - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
BC846W 数据手册
BC846W SERIES BC847W SERIES SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-323 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO IEBO BVCBO BVCBO BVCEO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(ON) VBE(ON) Cob fT NF Note: Reverse Lead Codes Available, Add “R” to the end of the Part # and Marking Code. SYMBOL VCBO VCEO VEBO IC ICM IBM PD TJ, Tstg ΘJA BC847W 50 45 BC846W 80 65 UNITS V V V mA mA mA mW °C °C/W 5.0 100 200 200 275 -65 to +150 455 CHARACTERISTICS: (TA=25°C unless TEST CONDITIONS VCB=30V VCB=30V, TA=150°C VEB=5.0V IC=10μA (BC847W) IC=10μA (BC846W) IC=10mA (BC847W) IC=10mA (BC846W) IE=10μA IC=10mA, IB=0.5mA IC=100mA, IB=5.0mA IC=2.0mA, VCE=5.0V IC=10mA, VCE=5.0V VCB=10V, IE=0, f=1.0MHz VCE=5.0V, IC=10mA, f=100MHz VCE=5.0V, IC=200μA, RS=2.0KΩ, f=1.0KHz, BW=200Hz otherwise noted) MIN MAX 15 5.0 100 50 80 45 65 5.0 0.25 0.60 0.70 0.77 3.0 0.58 100 10 BC846BW BC847BW MIN MAX 200 450 UNITS nA μA nA V V V V V V V V V pF MHz dB hFE VCE=5.0V, IC=2.0mA BC846AW BC847AW MIN MAX 110 220 BC847CW MIN MAX 420 800 R1 (20-November 2009) BC846W SERIES BC847W SERIES SURFACE MOUNT NPN SILICON TRANSISTOR SOT-323 CASE - MECHANICAL OUTLINE LEAD CODE: STANDARD 1) BASE 2) EMITTER 3) COLLECTOR DEVICE BC846AW BC846BW BC847AW BC847BW BC847CW *REVERSE 1) EMITTER 2) BASE 3) COLLECTOR MARKING CODE 1AT 1BT 1ET 1FT 1GT * Reverse Lead Codes Available, Add “R” to the end of the Part # and Marking Code. R1 (20-November 2009) w w w. c e n t r a l s e m i . c o m
BC846W
1. 物料型号: - BC846W系列 - BC847W系列

2. 器件简介: - 这些是NPN硅晶体管,采用外延平面工艺制造,环氧模塑在SUPERmini™表面贴装封装中,设计用于通用开关和放大应用。

3. 引脚分配: - 标准:1) 基极,2) 发射极,3) 集电极 - 反向:1) 基极,2) 发射极,3) 集电极

4. 参数特性: - 最大额定值(TA=25°C): - 集电极-基极电压(VCBO):BC847W为50V,BC846W为80V - 集电极-发射极电压(VCEO):BC847W为45V,BC846W为65V - 基极-发射极电压(VEBO):BC847W为5.0V - 连续集电极电流(IC):BC847W为100mA - 峰值集电极电流(ICM):BC847W为200mA - 峰值基极电流(BM):BC847W为200mA - 功率耗散(PD):BC847W为275mW - 工作和存储结温(TJ Tstg):-65至+150°C - 热阻(OJA):455°C/W

5. 功能详解: - 电气特性(TA=25°C除非另有说明): - 集电极-基极反向饱和电流(ICBO):VCB=30V时,BC847W为15nA,BC846W为5.0A(150°C时) - 发射极-基极反向饱和电流(IEBO):VEB=5.0V时,为100nA - 集电极-基极击穿电压(BVCBO):BC847W为50V,BC846W为80V - 集电极-发射极击穿电压(BVCEO):BC847W为45V,BC846W为65V - 基极-发射极击穿电压(BVEBO):5.0V - 饱和压降(VCE(SAT)):Ic=10mA, Ig=0.5mA时,BC847W为0.25V;Ic=100mA, Ig=5.0mA时,BC847W为0.60V - 基极-发射极电压(VBE(ON)):Ic=2.0mA, VCE=5.0V时,BC847W为0.58V至0.70V;Ic=10mA, VCE=5.0V时,BC847W为0.77V - 截止频率(fT):BC847W为3.0MHz - 增益带宽积(fT):BC847W为2MHz

6. 应用信息: - 这些晶体管设计用于通用开关和放大应用。

7. 封装信息: - SOT-323表面贴装封装 - 机械轮廓图和尺寸数据已提供,包括英寸和毫米单位的最小和最大尺寸。
BC846W 价格&库存

很抱歉,暂时无法提供与“BC846W”相匹配的价格&库存,您可以联系我们找货

免费人工找货