BC856T SERIES BC857T SERIES SURFACE MOUNT PNP SILICON TRANSISTOR
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DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE
SOT-523 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IBM PD TJ, Tstg ΘJA BC857T 50 45 BC856T 80 65 UNITS V V V mA mA mA mW °C °C/W
5.0 100 200 100 250 -65 to +150 500
ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS ICBO VCB=30V ICBO VCB=30V, TA=150°C IEBO VEB=5.0V BVCBO IC=10μA (BC857T) BVCBO IC=10μA (BC856T) BVCEO IC=10mA (BC857T) BVCEO IC=10mA (BC856T) BVEBO IE=10μA VCE(SAT) IC=10mA, IB=0.5mA VCE(SAT) IC=100mA, IB=5.0mA VBE(ON) IC=2.0mA, VCE=5.0V VBE(ON) IC=10mA, VCE=5.0V fT VCE=5.0V, IC=10mA, f=100MHz Cc VCB=10V, IE=0, f=1.0MHz Ce VEB=0.5V, IC=0, f=1.0MHz NF VCE=5.0V, IC=200μA, RS=2.0KΩ, f=1.0KHz, BW=200Hz
otherwise noted) MIN TYP
MAX 15 5.0 100
50 80 45 65 5.0 0.20 0.40 0.70 0.77 2.5 10 10 BC856BT BC857BT MIN MAX 220 475
0.58 100
UNITS nA μA nA V V V V V V V V V MHz pF pF dB
hFE
VCE=5.0V, IC=2.0mA
BC856AT BC857AT MIN MAX 125 250
BC857CT MIN MAX 420 800
R1 (20-November 2009)
BC856T SERIES BC857T SERIES SURFACE MOUNT PNP SILICON TRANSISTOR
SOT-523 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR
DEVICE BC856AT BC856BT BC857AT BC857BT BC857CT
MARKING CODE GT6 GT7 GT8 GT9 GT0
R1 (20-November 2009)
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