BC857CT

BC856T SERIES BC857T SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-523 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IBM PD TJ, Tstg ΘJA BC857T 50 45 BC856T 80 65 UNITS V V V mA mA mA mW °C °C/W 5.0 100 200 100 250 -65 to +150 500 ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS ICBO VCB=30V ICBO VCB=30V, TA=150°C IEBO VEB=5.0V BVCBO IC=10μA (BC857T) BVCBO IC=10μA (BC856T) BVCEO IC=10mA (BC857T) BVCEO IC=10mA (BC856T) BVEBO IE=10μA VCE(SAT) IC=10mA, IB=0.5mA VCE(SAT) IC=100mA, IB=5.0mA VBE(ON) IC=2.0mA, VCE=5.0V VBE(ON) IC=10mA, VCE=5.0V fT VCE=5.0V, IC=10mA, f=100MHz Cc VCB=10V, IE=0, f=1.0MHz Ce VEB=0.5V, IC=0, f=1.0MHz NF VCE=5.0V, IC=200μA, RS=2.0KΩ, f=1.0KHz, BW=200Hz otherwise noted) MIN TYP MAX 15 5.0 100 50 80 45 65 5.0 0.20 0.40 0.70 0.77 2.5 10 10 BC856BT BC857BT MIN MAX 220 475 0.58 100 UNITS nA μA nA V V V V V V V V V MHz pF pF dB hFE VCE=5.0V, IC=2.0mA BC856AT BC857AT MIN MAX 125 250 BC857CT MIN MAX 420 800 R1 (20-November 2009) BC856T SERIES BC857T SERIES SURFACE MOUNT PNP SILICON TRANSISTOR SOT-523 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR DEVICE BC856AT BC856BT BC857AT BC857BT BC857CT MARKING CODE GT6 GT7 GT8 GT9 GT0 R1 (20-November 2009) w w w. c e n t r a l s e m i . c o m