BCW61D

BCW61B BCW61C BCW61D SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise applications. MARKING CODES: BCW61B : BB BCW61C : BC BCW61D : BD SOT-23 CASE MAXIMUM RATINGS (TA=25°C) SYMBOL Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance ΘJA UNITS V V V mA mW °C °C/W 32 32 5.0 100 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL ICES ICES BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(ON) Cob NF ton ton TEST CONDITIONS MIN VCE=32V VCE=32V, TA=150°C IC=2.0mA 32 IE=1.0µA 5.0 IC=10mA, IB=250µA IC=50mA, IB=1.25mA IC=10mA, IB=250µA 0.60 IC=50mA, IB=1.25mA 0.68 VCE=5.0V, IC=2.0mA 0.60 VCB=10V, IC=0, f=1.0MHz VCE=5.0V, IC=0.2mA, RS=2.0kΩ, f=1.0kHz, BW=200Hz VCC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA VCC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA BCW61B MIN MAX 30 140 310 80 175 350 MAX 20 20 UNITS nA µA V V V V V V V pF ns ns BCW61D MIN MAX 100 380 630 100 350 700 0.25 0.55 0.85 1.05 0.75 6.0 6.0 dB 150 800 hFE hFE hFE hfe VCE=5.0V, VCE=5.0V, VCE=1.0V, VCE=5.0V, IC=10µA IC=2.0mA IC=50mA IC=2.0mA, f=1.0kHz BCW61C MIN MAX 40 250 460 100 250 500 R1 (20-February 2003) Central TM Semiconductor Corp. BCW61B BCW61C BCW61D SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODES: BCW61B : BB BCW61C : BC BCW61D : BD R1 (20-February 2003)