BCW65

BCW65 SERIES BCW66 SERIES SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD TJ, Tstg ΘJA BCW65 60 32 5.0 800 1.0 100 200 350 -65 to +150 357 MAX 20 20 20 BCW66 75 45 UNITS V V V mA A mA mA mW °C °C/W UNITS nA µA nA V V V V V V V V V MHz pF pF BCW65C BCW66H MIN MAX 80 180 250 630 100 ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS ICBO VCB=Rated VCEO ICBO VCB= Rated VCEO, TA=150°C IEBO VEB=4.0V BVCBO IC=10µA (BCW65) BVCBO IC=10µA (BCW66) BVCEO IC=10mA (BCW65) BVCEO IC=10mA (BCW66) BVEBO IE=10µA VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=100mA, IB=10mA VBE(SAT) IC=500mA, IB=50mA fT VCE=5.0V, IC=50mA, f=20MHz Cc VCB=10V, IE=0, f=1.0MHz Ce VEB=0.5V, IC=0, f=1.0MHz otherwise noted) MIN TYP 60 75 32 45 5.0 0.3 0.7 1.25 2.0 170 6.0 60 BCW65B BCW66G MIN MAX 50 110 160 400 60 hFE hFE hFE hFE VCE=10V, IC=100µA VCE=1.0V, IC=10mA VCE=1.0V, IC=100mA VCE=2.0V, IC=500mA BCW65A BCW66F MIN MAX 35 75 100 250 35 R2 (20-November 2009) BCW65 SERIES BCW66 SERIES SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR DEVICE BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H MARKING CODE EA EB EC EF EG EH R2 (20-November 2009) w w w. c e n t r a l s e m i . c o m