BCW67 SERIES BCW68 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR
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DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Conitinuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO IEBO BVCBO BVCBO BVCEO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) fT Cc Ce SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD TJ, Tstg ΘJA BCW67 45 32 BCW68 60 45 UNITS V V V mA A mA mA mW °C °C/W UNITS nA µA nA V V V V V V V V V MHz pF pF BCW67C BCW68H MIN MAX 80 180 250 630 100
5.0 800 1.0 100 200 350 -65 to +150 357 MAX 20 20 20
CHARACTERISTICS: (TA=25°C unless TEST CONDITIONS VCB=Rated VCEO VCB= Rated VCEO, TA=150°C VEB=4.0V IC=10µA (BCW67) IC=10µA (BCW68) IC=10mA (BCW67) IC=10mA (BCW68) IE=10µA IC=100mA, IB=10mA IC=500mA, IB=50mA IC=100mA, IB=10mA IC=500mA, IB=50mA VCE=5.0V, IC=50mA, f=20MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz
otherwise noted) MIN TYP
45 60 32 45 5.0 0.3 0.7 1.25 2.0 200 6.0 60 BCW67B BCW68G MIN MAX 50 120 160 400 60
hFE hFE hFE hFE
VCE=10V, IC=100µA VCE=1.0V, IC=10mA VCE=1.0V, IC=100mA VCE=2.0V, IC=500mA
BCW67A BCW68F MIN MAX 35 75 100 250 35
R2 (20-November 2009)
BCW67 SERIES BCW68 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR
DEVICE BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H
MARKING CODE DA DB DC DF DG DH
R2 (20-November 2009)
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