BCW68G

BCW67 SERIES BCW68 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Conitinuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO IEBO BVCBO BVCBO BVCEO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) fT Cc Ce SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD TJ, Tstg ΘJA BCW67 45 32 BCW68 60 45 UNITS V V V mA A mA mA mW °C °C/W UNITS nA µA nA V V V V V V V V V MHz pF pF BCW67C BCW68H MIN MAX 80 180 250 630 100 5.0 800 1.0 100 200 350 -65 to +150 357 MAX 20 20 20 CHARACTERISTICS: (TA=25°C unless TEST CONDITIONS VCB=Rated VCEO VCB= Rated VCEO, TA=150°C VEB=4.0V IC=10µA (BCW67) IC=10µA (BCW68) IC=10mA (BCW67) IC=10mA (BCW68) IE=10µA IC=100mA, IB=10mA IC=500mA, IB=50mA IC=100mA, IB=10mA IC=500mA, IB=50mA VCE=5.0V, IC=50mA, f=20MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz otherwise noted) MIN TYP 45 60 32 45 5.0 0.3 0.7 1.25 2.0 200 6.0 60 BCW67B BCW68G MIN MAX 50 120 160 400 60 hFE hFE hFE hFE VCE=10V, IC=100µA VCE=1.0V, IC=10mA VCE=1.0V, IC=100mA VCE=2.0V, IC=500mA BCW67A BCW68F MIN MAX 35 75 100 250 35 R2 (20-November 2009) BCW67 SERIES BCW68 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR DEVICE BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H MARKING CODE DA DB DC DF DG DH R2 (20-November 2009) w w w. c e n t r a l s e m i . c o m