BCX70G

BCX70 SERIES SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX70 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODES: BCX70G: BCX70H: BCX70J: BCX70K: AG AH AJ AK SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(ON) fT Cc Ce NF SYMBOL VCBO VCEO VEBO IC ICM IBM PD TJ, Tstg ΘJA UNITS V V V mA mA mA mW °C °C/W 45 45 5.0 100 200 200 350 -65 to +150 357 CHARACTERISTICS: (TA=25°C unless TEST CONDITIONS VCB=45V VCB=45V, TA=150°C VEB=4.0V IC=10μA IC=10mA IE=1.0μA IC=10mA, IB=250μA IC=50mA, IB=1.25mA IC=10mA, IB=250μA IC=50mA, IB=1.25mA VCE=5.0V, IC=2.0mA VCE=5.0V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=200μA, RS=2.0kΩ, f=1.0kHz, BW=200Hz otherwise noted) MIN TYP MAX 20 20 20 45 45 5.0 0.05 0.10 0.60 0.70 0.55 100 0.35 0.55 0.85 1.05 0.75 250 1.7 11 6.0 BCX70H MIN MAX 40 180 310 70 BCX70J MIN MAX 30 250 460 90 UNITS nA μA nA V V V V V V V V MHz pF pF dB BCX70K MIN MAX 100 380 630 100 BCX70G MIN MAX hFE hFE hFE VCE=5.0V, VCE=5.0V, VCE=1.0V, IC=10μA IC=2.0mA IC=50mA 120 50 220 R2 (20-November 2009) BCX70 SERIES SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR DEVICE BCX70G BCX70H BCX70J BCX70K MARKING CODE AG AH AJ AK R2 (20-November 2009) w w w. c e n t r a l s e m i . c o m