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BD137

BD137

  • 厂商:

    CENTRAL

  • 封装:

  • 描述:

    BD137 - NPN SILICON TRANSISTOR - Central Semiconductor Corp

  • 数据手册
  • 价格&库存
BD137 数据手册
BD135 BD137 BD139 NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Power Dissipation (Tmb≤70°C) Power Dissipation (TA=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL BD135 BD137 BD139 VCBO 45 60 100 VCEO 45 60 80 VEBO 5.0 IC 1.5 ICM 2.0 IB 0.5 IBM 1.0 PD 8.0 PD 1.25 TJ, Tstg -65 to +150 ΘJmb 10 ΘJA 100 MAX 100 10 100 UNITS V V V A A A A W W °C °C/W °C/W UNITS nA µA nA V V V V V ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=30V ICBO VCB=30V, TC=125°C IEBO VEB=5.0V BVCEO IC=30mA (BD135) 45 BVCEO IC=30mA (BD137) 60 BVCEO IC=30mA (BD139) 80 VCE(SAT) IC=500mA, IB=50mA VBE(ON) VCE=2.0V, IC=500mA hFE VCE=2.0V, IC=5.0mA 40 hFE VCE=2.0V, IC=150mA 63 hFE VCE=2.0V, IC=500mA 25 fT VCE=5.0V, IC=50mA, f=100MHz 190 BD135-10 BD137-10 BD139-10 MIN MAX 63 160 0.5 1.0 250 MHz SYMBOL hFE TEST CONDITIONS VCE=2.0V, IC=500mA BD135-16 BD137-16 BD139-16 MIN MAX 100 250 R3 (18-September 2009) Central TM Semiconductor Corp. BD135 BD137 BD139 NPN SILICON TRANSISTOR TO-126 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base Mounting Pad is Common to Pin 2 MARKING: FULL PART NUMBER R3 (18-September 2009)
BD137 价格&库存

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