BD442

BD442

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    BD442 - COMPLEMENTARY SILICON POWER TRANSISTORS - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
BD442 数据手册
BD439 BD441 BD440 BD442 NPN PNP Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BD439, BD440 series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for medium power, low speed switching applications. MARKING: FULL PART NUMBER COMPLEMENTARY SILICON POWER TRANSISTORS TO-126 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (t≤10ms) Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance ELECTRICAL CHARACTERISTICS: (TC=25°C) SYMBOL TEST CONDITIONS ICBO VCB=Rated VCBO ICES IEBO BVCEO BVCEO VCE(SAT) VBE(ON) hFE hFE hFE hFE hFE fT VCE=Rated VCEO VEB=5.0V IC=100mA (BD439, BD440) IC=100mA (BD441, BD442) IC=2.0A, IB=200mA VCE=1.0V, IC=2.0A VCE=5.0V, IC=10mA (BD439, BD440) VCE=5.0V, IC=10mA (BD441, BD442) VCE=1.0V, IC=500mA VCE=1.0V, IC=2.0A (BD439, BD440) VCE=1.0V, IC=2.0A (BD441, BD442) VCE=1.0V, IC=250mA 20 15 40 25 15 3.0 MHz 60 80 0.8 1.5 SYMBOL VCBO VCES VCEO VEBO IC ICM IB PD TJ, Tstg ΘJA ΘJC BD439 BD440 60 60 60 5.0 4.0 7.0 1.0 36 -65 to +150 100 3.5 BD441 BD442 80 80 80 UNITS V V V V A A A W °C °C/W °C/W MIN MAX 100 100 1.0 UNITS μA μA mA V V V V R1 (2-February 2009) Central TM BD439 BD441 BD440 BD442 NPN PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTORS TO-126 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING: FULL PART NUMBER R1 (2-February 2009)
BD442
1. 物料型号: - BD439和BD441是NPN型硅功率晶体管。 - BD440和BD442是PNP型硅功率晶体管。

2. 器件简介: - 这些晶体管由Central Semiconductor Corp.制造,采用外延基工艺制造,适用于中等功率、低速度开关应用。

3. 引脚分配: - 引脚代码:1)发射极 2)集电极 3)基极。

4. 参数特性: - 最大额定值(TC=25°C): - 集电极-基极电压(VCBO):BD439 BD440为60V,BD441 BD442为80V。 - 集电极-发射极电压(VCES、VCEO):均为60V和80V。 - 电气特性(Tc=25°C): - 集电极饱和电流(ICBO):最大100μA。 - 集电极截止电流(ICEO):最大100μA。 - 基极-发射极电压(VBE(ON)):最大1.5V。 - 电流增益(hFE):在不同条件下变化,例如在VCE=5.0V,Ic=10mA时,BD439和BD440为20,BD441和BD442未给出具体数值。

5. 功能详解: - 这些晶体管设计用于中等功率、低速度的开关应用,具有互补的NPN和PNP配置,适用于需要互补对的电路设计。

6. 应用信息: - 适用于中等功率和低速度的开关应用,具体应用场景未在文档中详细说明。

7. 封装信息: - 采用TO-126封装,PDF中提供了详细的机械尺寸和引脚布局。
BD442 价格&库存

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