BFX89

BFX89 BFY90 NPN SILICON RF TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are Silicon NPN Epitaxial Planar Transistors mounted in a hermetically sealed package designed for VHF/UHF amplifier, oscillator, and converter applications. MARKING CODE: FULL PART NUMBER JEDEC TO-72 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage (RBE≤50Ω) Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current (f ≥ 1 MHz) Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance TJ,Tstg ΘJA ΘJC -65 to +200 875 583 °C °C/W °C/W SYMBOL VCBO VCER VCEO VEBO IC ICM PD PD 30 30 15 2.5 25 50 200 300 UNITS V V V V mA mA mW mW ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICBO BVCBO BVCER BVCEO BVEBO hFE hFE fT fT Cob Cre VCB=15V IC=10µA IC=1.0mA, RBE=50Ω IC=1.0mA IE=10µA VCE=1.0V, IC=2.0mA VCE=1.0V, IC=25mA VCE=5.0V, IC=2.0mA, f=500MHz VCE=5.0V, IC=25mA, f=500MHz VCB=10V, IE=0, f=1.0MHz VCE=5.0V, IC=2.0mA, f=1.0MHz BFX89 MIN TYP MAX 10 30 30 15 2.5 20 20 1.0 1.2 1.7 0.6 0.6 150 125 30 30 15 2.5 25 20 1.0 1.3 1.1 1.4 1.5 0.8 150 125 GHz GHz pF pF BFY90 MIN TYP MAX 10 UNITS nA V V V V R3 (20-March 2006) Central TM BFX89 BFY90 NPN SILICON RF TRANSISTORS Semiconductor Corp. ELECTRICAL CHARACTERISTICS (CONTINUED): (TA=25°C unless otherwise noted) BFY90 BFX89 SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX Gpe Gpe Gpe Gpe NF NF NF NF Po Po VCE=10V, IC=8mA, f=200MHz VCE=10V, IC=8mA, f=800MHz VCE=10V, IC=14mA, f=200MHz VCE=10V, IC=14mA, f=800MHz VCE=5.0V, IC=2.0mA, f=100kHz VCE=5.0V, IC=2.0mA, f=200MHz VCE=5.0V, IC=2.0mA, f=500MHz, RG=50Ω VCE=5.0V, IC=2.0mA, f=800MHz VCE=10V, IC=8mA, f=205MHz VCE=10V, IC=14mA, f=205MHz 3.3 7.0 6.0 10 12 4.0 6.5 5.5 19 22 7.0 21 23 8.0 4.0 2.5 3.5 5.0 UNITS dB dB dB dB dB dB dB dB mW mW JEDEC TO-72 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) BASE 3) COLLECTOR 4) CASE R3 (20-March 2006)