BU806

BU806 BU807 NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEV VCEO VEBO IC ICM IB PD TJ, Tstg BU806 400 400 200 6.0 8.0 15 2.0 60 -65 to +150 70 2.08 TYP MAX 100 100 100 100 3.5 200 150 1.5 2.4 2.0 0.35 0.4 1.0 BU807 330 330 150 UNITS V V V V A A A W °C °C/W °C/W UNITS μA μA μA μA mA V V V V V μs μs ΘJA ΘJC ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES VCE=400V (BU806) ICES VCE=330V (BU807) ICEV ICEV IEBO BVCEO BVCEO VCE(SAT) VBE(SAT) VF ton toff VCE=400V, VEB=6.0V (BU806) VCE=330V, VEB=6.0V (BU807) VEB=6.0V IC=100mA (BU806) IC=100mA (BU807) IC=5.0A, IB=50mA IC=5.0A, IB=50mA IF=4.0A VCC=100V, IC=5.0A, IB1=50mA, IB2=500mA VCC=100V, IC=5.0A, IB1=50mA, IB2=500mA R0 (4-August 2011) BU806 BU807 NPN SILICON DARLINGTON TRANSISTOR TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R0 (4-August 2011) w w w. c e n t r a l s e m i . c o m