CBCX68_10

CBCX68 SERIES NPN CBCX69 SERIES PNP SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBCX68 and CBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCES VCEO VEBO IC ICM IB IBM PD TJ, Tstg ΘJA UNITS V V V A A mA mA W °C °C/W 25 20 5.0 1.0 2.0 100 200 1.2 -65 to +150 104 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=25V ICBO VCB=25V, TA=150°C IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(ON) VBE(ON) hFE hFE hFE hFE hFE fT VEB=5.0V IC=10µA IC=10mA IE=1.0µA IC=1.0A, IB=100mA VCE=10V, IC=5.0mA VCE=1.0V, IC=1.0A VCE=10V, IC=5.0mA VCE=1.0V, IC=500mA (CBCX68, CBCX69) VCE=1.0V, IC=500mA (CBCX68-16, CBCX69-16) VCE=1.0V, IC=500mA (CBCX68-25, CBCX69-25) VCE=1.0V, IC=1.0A VCE=5.0V, IC=10mA, f=20MHz 50 85 100 160 60 65 25 20 5.0 TYP MAX 100 10 10 UNITS nA µA µA V V V 0.5 0.6 1.0 375 250 400 V V V MHz R10 (4-January 2010) CBCX68 SERIES NPN CBCX69 SERIES PNP SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS SOT-89 CASE - MECHANICAL OUTLINE (BOTTOM VIEW) LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING: FULL PART NUMBER R10 (4-January 2010) w w w. c e n t r a l s e m i . c o m