CBRHD-01_10

CBRHD-01 SURFACE MOUNT HIGH DENSITY 0.8 AMP SILICON BRIDGE RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHD-01 is a silicon full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. MARKING CODE: CBD1 FEATURES: • Efficient use of board space: requires only 42mm2 of board space vs. 120mm2 of board space needed for industry standard 1.0 Amp surface mount bridge rectifier. • 50% higher density (Amps/mm2) than the industry standard 1.0 Amp surface mount bridge rectifier. • Glass passivated chips for high reliability. HD DIP CASE • This series is UL listed: file number E130224 MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Current (TA=40°C) (Note1) Average Forward Current (TA=40°C) (Note 2) Peak Forward Surge Current Operating and Storage Junction Temperature Thermal Resistance (Note 3) SYMBOL VRRM VR VR(RMS) IO IO IFSM TJ, Tstg ΘJA 100 100 70 0.5 0.8 30 -65 to +150 85 UNITS V V V A A A °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX IR VR= 100V 5.0 IR VF CJ VR= 100V, TA=125°C IF=400mA VR=4.0V, f=1.0MHz 9.0 500 1.0 UNITS µA µA V pF Notes: (1) Mounted on Glass-Epoxy PCB. (2) Mounted on Ceramic PCB. (3) Mounted on PCB with 0.5” x 0.5” copper pads. R2 (4-January 2010) CBRHD-01 SURFACE MOUNT HIGH DENSITY 0.8 AMP SILICON BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUTLINE MARKING CODE: CBD1 R2 (4-January 2010) w w w. c e n t r a l s e m i . c o m