CBRHDSH1-100

CBRHDSH1-100

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CBRHDSH1-100 - SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER - Central Semicond...

  • 数据手册
  • 价格&库存
CBRHDSH1-100 数据手册
CBRHDSH1-100 SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHDSH1-100 is a full wave bridge rectifier in a durable epoxy surface mount molded case, designed for low voltage full wave rectification applications. The molding compound used in this device has UL flammability classification 94V-O. MARKING CODE: CSH110 FEATURES: • Low Leakage Current (100nA TYP @ VRRM) • Low Forward Voltage Drop Schottky Diodes • High 1.0A Current Rating HD DIP CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Current Peak Forward Surge Current Power Dissipation Operating Junction Temperature Storage Temperature Thermal Resistance SYMBOL VRRM VR VR(RMS) IO IFSM PD TJ Tstg ΘJA 100 100 71 1.0 20 1.2 -50 to +125 -50 to +150 85 UNITS V V V A A W °C °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL IR IR BVR VF VF CJ TEST CONDITIONS VR=100V VR=100V, TA=100°C IR=150µA IF=500mA IF=1.0A VR=4.0V, f=1.0MHz 100 650 700 230 700 750 MIN TYP 0.1 MAX 10 20 UNITS µA mA V mV mV pF R3 (4-January 2010) CBRHDSH1-100 SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUTLINE MARKING CODE: CSH110 R3 (4-January 2010) w w w. c e n t r a l s e m i . c o m
CBRHDSH1-100 价格&库存

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