CBRHDSH2-100

CBRHDSH2-100 SURFACE MOUNT SILICON HIGH DENSITY 2.0 AMP DUAL IN LINE SCHOTTKY BRIDGE RECTIFIER Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHDSH2-100 is a full wave bridge rectifier mounted in a durable epoxy surface mount case, utilizing glass passivated chips. MARKING CODE: CSH10 FEATURES: • Low Leakage Current (700nA TYP @ VRRM) • High 2.0A Current Rating • Low VF Schottky Diodes (840mV MAX @ IF=2.0A) HD DIP CASE • Device is Halogen Free by design MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Peak Repetitive Reverse Voltage VRRM DC Blocking Voltage RMS Reverse Voltage Average Forward Current, TA=75°C Peak Forward Surge Current (8.3ms) Operating Junction Temperature Range Storage Temperature Range VR VR(RMS) IO IFSM TJ Tstg 100 100 70 2.0 50 -50 to +125 -50 to +150 UNITS V V V A A °C °C ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX IR VR=100V 0.70 4.0 VF VF VF CJ IF=500mA IF=1.0A IF=2.0A VR=4.0V, f=1.0MHz 610 700 770 840 250 UNITS µA mV mV mV pF R2 (8-October 2009) Central TM CBRHDSH2-100 SURFACE MOUNT SILICON HIGH DENSITY 2.0 AMP DUAL IN LINE SCHOTTKY BRIDGE RECTIFIER Semiconductor Corp. HD DIP CASE - MECHANICAL OUTLINE MARKING CODE: CSH10 R2 (8-October 2009) Central TM CBRHDSH2-100 SURFACE MOUNT SILICON HIGH DENSITY 2.0 AMP DUAL IN LINE SCHOTTKY BRIDGE RECTIFIER Semiconductor Corp. TYPICAL ELECTRICAL CHARACTERISTICS R2 (8-October 2009)