CBRHDSH2-100_10

CBRHDSH2-100 SURFACE MOUNT HIGH DENSITY 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHDSH2-100 is a full wave bridge rectifier mounted in a durable epoxy surface mount case, utilizing glass passivated chips. MARKING CODE: CSH10 FEATURES: • Low Leakage Current (700nA TYP @ VRRM) • High 2.0A Current Rating • Low VF Schottky Diodes (840mV MAX @ IF=2.0A) HD DIP CASE • Device is Halogen Free by design MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Current (TA=75°C) Peak Forward Surge Current (8.3ms) Operating Junction Temperature Storage Temperature SYMBOL VRRM VR VR(RMS) IO IFSM TJ Tstg 100 100 70 2.0 50 -50 to +125 -50 to +150 UNITS V V V A A °C °C ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL IR VF VF VF CJ TEST CONDITIONS VR=100V IF=500mA IF=1.0A IF=2.0A VR=4.0V, f=1.0MHz TYP 0.70 610 700 770 840 250 MAX 4.0 UNITS µA mV mV mV pF R3 (4-January 2010) CBRHDSH2-100 SURFACE MOUNT HIGH DENSITY 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUTLINE MARKING CODE: CSH10 R3 (4-January 2010) w w w. c e n t r a l s e m i . c o m CBRHDSH2-100 SURFACE MOUNT HIGH DENSITY 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER TYPICAL ELECTRICAL CHARACTERISTICS R3 (4-January 2010) w w w. c e n t r a l s e m i . c o m