CBRHDSH2-40_10

CBRHDSH2-40 SURFACE MOUNT HIGH DENSITY 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHDSH2-40 is a full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. MARKING CODE: CSH2 FEATURES: • Low Leakage Current (20µA TYP @ VRRM) • High 2.0A Current Rating • Low VF Schottky Diodes (500mV MAX @IF=2.0A) SYMBOL VRRM VR VR(RMS) IO IFSM PD TJ Tstg ΘJA 40 40 28 2.0 30 2.0 -50 to +125 -50 to +150 50 UNITS V V V A A W °C °C °C/W HD DIP CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Current Peak Forward Surge Current Power Dissipation Operating Junction Temperature Storage Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL IR IR VF CJ TEST CONDITIONS VR=40V VR=40V, TA=100°C IF=2.0A VR=4.0V, f=1.0MHz TYP 20 5.0 450 MAX 50 20 500 250 UNITS µA mA mV pF R4 (4-January 2010) CBRHDSH2-40 SURFACE MOUNT HIGH DENSITY 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUTLINE MARKING CODE: CSH2 R4 (4-January 2010) w w w. c e n t r a l s e m i . c o m CBRHDSH2-40 SURFACE MOUNT HIGH DENSITY 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER TYPICAL ELECTRICAL CHARACTERISTICS R4 (4-January 2010) w w w. c e n t r a l s e m i . c o m