CDM3-800TR13

CDM3-800 SURFACE MOUNT SILICON N-CHANNEL POWER MOSFET 3.0 AMP, 800 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDM3-800 is a 800 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency. MARKING: FULL PART NUMBER DPAK CASE APPLICATIONS: • Power Factor Correction • Alternative energy inverters • Solid State Lighting (SSL) FEATURES: • High voltage capability (VDS=800V) • Low gate charge (Qg(tot)=11.3nC TYP) • Low rDS(ON) (3.8Ω TYP) MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Drain-Source Voltage VDS 800 V Gate-Source Voltage VGS 30 V Continuous Drain Current (Steady State) ID 3.0 A Maximum Pulsed Drain Current, tp=10µs IDM 12 A Continuous Source Current (Body Diode) IS 3.0 A Maximum Pulsed Source Current (Body Diode) ISM 12 A Single Pulse Avalanche Energy (Note 1) EAS 173 mJ Power Dissipation PD 80 W Operating and Storage Junction Temperature TJ, Tstg -55 to +150 °C Thermal Resistance ΘJC 1.56 °C/W Thermal Resistance ΘJA 110 °C/W Note 1: L=30mH, IAS=3.15A, VDD=100V, RG=20Ω, Initial TJ=25°C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR VGS=30V, VDS=0 100 nA IDSS VDS=800V, VGS=0 0.08 1.0 μA BVDSS VGS=0, ID=250µA 800 V VGS(th) VGS=VDS, ID=250µA 2.0 4.0 V VSD VGS=0, IS=3.0A 1.4 V rDS(ON) VGS=10V, ID=1.5A 3.8 4.8 Ω Crss VDS=25V, VGS=0, f=1.0MHz 2.0 pF Ciss VDS=25V, VGS=0, f=1.0MHz 415 pF Coss VDS=25V, VGS=0, f=1.0MHz 44 pF R2 (8-August 2022) CDM3-800 SURFACE MOUNT SILICON N-CHANNEL POWER MOSFET 3.0 AMP, 800 VOLT ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP UNITS Qg(tot) VDS=640V, VGS=10V, ID=3.0A (Note 2) 11.3 nC Qgs VDS=640V, VGS=10V, ID=3.0A (Note 2) 2.55 nC Qgd VDS=640V, VGS=10V, ID=3.0A (Note 2) 5.28 nC td(on) VDD=400V, ID=3.0A, RG=25Ω (Note 2) 13.87 ns tr VDD=400V, ID=3.0A, RG=25Ω (Note 2) 30.53 ns td(off) VDD=400V, ID=3.0A, RG=25Ω (Note 2) 25 ns tf VDD=400V, ID=3.0A, RG=25Ω (Note 2) 25 ns trr VGS=0, IS=3.0A, di/dt=100A/μs (Note 2) 437 ns Qrr VGS=0, IS=3.0A, di/dt=100A/μs (Note 2) 1.68 μC Note 2: Pulse Width < 300μs, Duty Cycle < 2% DPAK CASE - MECHANICAL OUTLINE SYMBOL A B C D E F G H J K L M N P R DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.083 0.108 2.10 2.75 0.016 0.032 0.40 0.81 0.035 0.063 0.89 1.60 0.203 0.228 5.15 5.79 0.020 0.51 0.016 0.024 0.40 0.60 0.051 0.071 1.30 1.80 0.248 0.268 6.30 6.81 0.197 0.217 5.00 5.50 0.209 0.245 5.30 6.22 0.025 0.040 0.64 1.02 0.090 0.115 2.30 2.91 0.012 0.045 0.30 1.14 4.60 0.180 0.090 2.30 DPAK (REV: R1) PIN CONFIGURATION LEAD CODE: 1) Gate 2) Drain 3) Source 4) Drain Pin 2 is common to the tab (4) MARKING: FULL PART NUMBER R2 (8-August 2022) w w w. c e n t r a l s e m i . c o m CDM3-800 SURFACE MOUNT SILICON N-CHANNEL POWER MOSFET 3.0 AMP, 800 VOLT TYPICAL ELECTRICAL CHARACTERISTICS R2 (8-August 2022) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)