CEDM7002AE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM7002AE
is a special ESD protected version of the 2N7002
enhancement-mode N-Channel MOSFET designed for
high speed pulsed amplifier and driver applications.
MARKING CODE: 7
SOT-883L CASE
APPLICATIONS:
• Load/Power switches
• DC-DC converter circuits
• Power management
FEATURES:
♦
• ESD protection up to 1800V
• Low gate charge
• Low rDS(ON)
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
SYMBOL UNITS
VDS 60 V
Drain-Gate Voltage
VDG
Gate-Source Voltage
VGS 20 V
Continuous Drain Current
Maximum Pulsed Drain Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
60 V
ID 300 mA
IDM 800 mA
PD
100 mW
TJ, Tstg
-65 to +150
°C
ΘJA 1250 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IGSSF, IGSSR VGS=20V, VDS=0 10 µA
♦ IDSS VDS=60V, VGS=0 100 nA
IDSS VDS=60V, VGS=0, TJ=125°C 500 µA
60 70 V
♦ BVDSS VGS=0, ID=10µA
VGS(th)
VSD
VDS=VGS, ID=250µA
VGS=0, IS=115mA (Note 1)
1.2 1.5 2.0 V
0.5
♦ rDS(ON) VGS=10V, ID=500mA (Note 1)
rDS(ON) VGS=5.0V, ID=100mA (Note 1)
1.1
V
1.1
1.6
Ω
1.15
2.0
Ω
rDS(ON) VGS=2.5V, ID=10mA (Note 1)
3.0
6.0
Ω
gFS VDS=10V, ID=200mA
220 mS
Crss VDS=25V, VGS=0, f=1.0MHz
Ciss VDS=25V, VGS=0, f=1.0MHz
Coss
VDS=25V, VGS=0, f=1.0MHz
♦ Enhanced specification
Notes: (1) tp=380μs
5.0
pF
50
pF
25
pF
R3 (21-January 2022)
CEDM7002AE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
TYP
MAX
UNITS
Qg(tot) VDS=10V, VGS=4.5V, ID=200mA 0.5 nC
Qgs VDS=10V, VGS=4.5V, ID=200mA 0.2 nC
Qgd VDS=10V, VGS=4.5V, ID=200mA 0.14 nC
ton
VDD=30V, VGS=10V, ID=200mA 20 ns
toff
RG=25Ω, RL=150Ω 45
ns
SOT-883L CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
(Bottom View)
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: 7
R3 (21-January 2022)
w w w. c e n t r a l s e m i . c o m
CEDM7002AE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R3 (21-January 2022)
w w w. c e n t r a l s e m i . c o m
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PRODUCT SUPPORT
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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