CEDM7004

CEDM7004 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7004 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE: S SOT-883L CASE • Devices are Halogen Free by design APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Devices MAXIMUM RATING: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TL=25°C) Peak Drain Current, tp≤10μs (TL=25°C) Continuous Source Current (TL=25°C) Peak Source Current, tp≤10μs (TL=25°C) Power Dissipation Operating and Storage Junction Temperature FEATURES: • ESD Protection up to 2kV • 0.4mm Low Package Profile • Low rDS(on) • Low Threshold Voltage • Logic Level Compatible • Small, TLP™ 1x0.6mm, SOT-883L Leadless Surface Mount Package SYMBOL VDS VGS ID IDM IS ISM PD TJ, Tstg 30 8.0 1.78 3.56 1.78 3.56 100 -65 to +150 MAX 3.0 1.0 1.0 1.1 460 560 730 UNITS V V A A A A mW °C UNITS μA μA V V V mΩ mΩ mΩ mS pF pF pF ns ns ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=8.0V, VDS=0 IDSS VDS=30V, VGS=0 BVDSS VGS=0, ID=10μA 30 VGS(th) VDS=VGS, ID=250μA 0.5 VSD VGS=0, IS=400mA 0.5 rDS(ON) VGS=4.5V, ID=200mA 280 rDS(ON) VGS=2.5V, ID=100mA 390 rDS(ON) VGS=1.8V, ID=75mA 550 gFS VDS =10V, ID=100mA 200 Crss VDS=25V, VGS=0, f=1.0MHz 5.0 Ciss VDS=25V, VGS=0, f=1.0MHz 43 Coss VDS=25V, VGS=0, f=1.0MHz 8.0 ton VDS=5.0V, VGS=4.0V, ID=75mA, RG=10Ω 20 toff VDS=5.0V, VGS=4.0V, ID=75mA, RG=10Ω 75 R3 (15-February 2011) CEDM7004 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-883L CASE - MECHANICAL OUTLINE PIN CONFIGURATION (Bottom View) LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: S R3 (15-February 2011) w w w. c e n t r a l s e m i . c o m CEDM7004 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R3 (15-February 2011) w w w. c e n t r a l s e m i . c o m