CEDM8001BK

CEDM8001 SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is a P-Channel Enhancement-mode silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low theshold voltage. MARKING CODE: F COMPLEMENTARY N-CHANNEL: CEDM7001 APPLICATIONS: • Load/Power switches • DC - DC converters • Battery powered portable equipment FEATURES: • 100mW Power Dissipation • 0.4mm low package profile • Low rDS(ON) • Low threshold voltage • Logic level compatible • Small leadless surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VDS VGS ID ID PD TJ, Tstg SOT-883L CASE ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=10V, VDS=0 IDSS VDS=20V, VGS=0 BVDSS VGS(th) rDS(ON) rDS(ON) rDS(ON) gFS VGS=0, ID=100μA VDS=VGS, ID=250μA MAX 1.0 UNITS μA 1.0 μA 1.1 V 1.9 8.0 Ω 2.4 12 Ω 20 V 0.6 VGS=4.0V, ID=10mA VGS=2.5V, ID=10mA VGS=1.5V, ID=1.0mA 45 Crss VDS=10V, ID=100mA VDS=3.0V, VGS=0, f=1.0MHz Ciss Coss Qg(tot) Qgs Qgd VDS=3.0V, VGS=0, f=1.0MHz VDS=3.0V, VGS=0, f=1.0MHz VDS=10V, VGS=4.5V, ID=100mA VDS=10V, VGS=4.5V, ID=100mA VDS=10V, VGS=4.5V, ID=100mA ton VDD=3.0V, VGS=2.5V, VDD=3.0V, VGS=2.5V, toff UNITS V V mA mA mW °C 20 10 100 200 100 -65 to +150 ID=10mA ID=10mA 100 Ω mS 15 pF 45 pF 15 0.658 0.158 0.181 pF nC nC nC 35 ns 80 ns R8 (19-September 2014) CEDM8001 SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET SOT-883L CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: F Package Type Options (all dimensions are maximum - in mm) Package Length Width Height SOT-883L 1.05 0.65 0.40 PD (mW) 100 Central Item Number SOT-883VL 1.05 0.65 0.32 100 CEDM8001VL SOT-953 1.05 1.05 0.50 250 CMNDM8001 SOT-523 1.70 1.70 0.78 250 CMUDM8001 CEDM8001 R8 (19-September 2014) w w w. c e n t r a l s e m i . c o m CEDM8001 SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R8 (19-September 2014) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)