CEN-U45_07

Central CEN-U45 NPN SILICON DARLINGTON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CEN-U45 type is an NPN Silicon Monolithic Darlington Transistor designed for applications requiring high gain and high power dissipation. MARKING CODE: FULL PART NUMBER JEDEC TO-202 CASE APPLICATIONS: • Designed for general purpose amplifiers and drivers MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance FEATURES: • High Collector current (2.0A) • High DC current gain (25K MIN) • Low Voltage (50V MAX) SYMBOL VCBO VCEO VCES VEBO IC PD PD TJ,Tstg ΘJA ΘJC 50 40 40 12 2.0 2.0 10 -65 to +150 62.5 12.5 UNITS V V V V A W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO IEBO BVCBO BVCES BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) VCB=30V VEB=10V IC=100μA IC=100μA IE=10μA IC=1.0A, IB=2.0mA IC=200mA, IB=2.0mA IC=1.0A, IB=2.0mA VCE=5.0V, IC=1.0A 50 40 12 1.5 1.0 2.0 2.0 100 100 UNITS nA nA V V V V V V V R1 (28-August 2007) Central hFE hFE hFE fT Cob TM CEN-U45 NPN SILICON DARLINGTON TRANSISTOR Semiconductor Corp. ELECTRICAL CHARACTERISTICS: (continued) SYMBOL TEST CONDITIONS VCE=5.0V, IC=200mA VCE=5.0V, IC=500mA VCE=5.0V, IC=1.0A VCE=5.0V, IC=200mA, f=100MHz VCB=10V, IE=0, f=1.0MHz MIN 25K 15K 4.0K 100 MAX 150K UNITS MHz 8.0 pF TO-202 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) BASE 3) COLLECTOR MARKING CODE: FULL PART NUMBER R1 (28-August 2007)