CEN-U56

CEN-U05 CEN-U06 CEN-U07 NPN CEN-U55 CEN-U56 CEN-U57 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEN-U05/U55 series types are complementary silicon power transistors designed for general purpose audio amplifier applications. These devices are electrically equivalent to National Semiconductor’s NSDU05, NSDU06, NSDU07, NSDU55, NSDU56, and NSDU57. MARKING: FULL PART NUMBER TO-202 CASE APPLICATIONS: • Designed for general purpose high voltage amplifiers and drivers FEATURES: • High Collector-Emitter breakdown voltage • High 10W power dissipation CEN-U05 CEN-U55 60 60 CEN-U06 CEN-U07 CEN-U56 CEN-U57 80 100 80 100 4.0 2.0 10 1.75 -65 to +150 71.4 12.5 MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC UNITS V V V A W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless SYMBOL TEST CONDITIONS ICBO VCB=Rated VCBO IEBO VEB=4.0V BVCEO IC=1.0mA (CEN-U05, CEN-U55) BVCEO IC=1.0mA (CEN-U06, CEN-U56) BVCEO IC=1.0mA (CEN-U07, CEN-U57) VCE(SAT) IC=250mA, IB=10mA VCE(SAT) IC=250mA, IB=25mA VBE(ON) VCE=1.0V, IC=250mA hFE VCE=1.0V, IC=50mA hFE VCE=1.0V, IC=250mA hFE VCE=1.0V, IC=500mA fT VCE=5.0V, IC=200mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz otherwise noted) MIN MAX 0.1 100 60 80 100 0.5 0.35 1.2 80 50 20 50 30 UNITS μA μA V V V V V V MHz pF R2 (20-January 2012) CEN-U05 CEN-U06 CEN-U07 NPN CEN-U55 CEN-U56 CEN-U57 PNP COMPLEMENTARY SILICON POWER TRANSISTORS TO-202 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector Tab is common to pin 3 MARKING: FULL PART NUMBER R2 (20-January 2012) w w w. c e n t r a l s e m i . c o m