CET3904E

CET3904E NPN CET3906E PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CET3904E / CET3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in a Tiny Leadless Package TLP™, these components provide performance characteristics suitable for the most demanding size constrained applications. Top View Bottom View MARKING CODES: CET3904E: C CET3906E: D FEATURES: • Device is Halogen Free by design • Power Dissipation 250mW APPLICATIONS: • Low VCE(SAT) 0.1V Typ @ 50mA • DC / DC Converters • Small, TLP™ 1x0.4mm, SOT-883L Leadless, • Battery powered devices including Low Profile, Surface Mount Package Cell Phones and Digital Cameras SOT-883L CASE ♦ MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJA 60 40 6.0 200 250 430 -65 to +150 500 290 UNITS V V V mA mW mW °C °C/W °C/W ♦ Emitter-Base Voltage Collector Current Power Dissipation (Note 1) Power Dissipation (Note 2) Operating and Storage Junction Temperature Thermal Resistance (Note 1) Thermal Resistance (Note 2) ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) NPN SYMBOL ICEV BVCBO BVCEO BVEBO VCE(SAT) TEST CONDITIONS VCE=30V, VEB=3.0V IC=10μA IC=1.0mA IE=10μA IC=10mA, IB=1.0mA MIN 60 40 6.0 TYP 115 60 7.5 0.057 PNP TYP 90 55 7.9 0.050 ♦ ♦ ♦ ♦ MAX 50 0.100 UNITS nA V V V V Enhanced specification Notes: (1) FR-4 epoxy PC board, standard mounting conditions (2) FR-4 epoxy PC board with collector mounting pad area of 1 cm2 R1 (5-MAY 2008) Central ♦ ♦ ♦ ♦ SYMBOL VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE fT Cob Cib hie hre hfe hoe NF td tr ts tf TM CET3904E NPN CET3906E PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS NPN TYP 0.100 0.75 0.85 240 235 215 110 50 PNP TYP 0.100 0.75 0.85 130 150 150 120 55 Semiconductor Corp. ELECTRICAL CHARACTERISTICS - Continued: TEST CONDITIONS MIN IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA 0.65 IC=50mA, IB=5.0mA VCE=1.0V, IC=0.1mA 90 VCE=1.0V, IC=1.0mA 100 VCE=1.0V, IC=10mA 100 VCE=1.0V, IC=50mA 70 VCE=1.0V, IC=100mA 30 VCE=20V, IC=10mA, f=100MHz 300 VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz 1.0 VCE=10V, IC=1.0mA, f=1.0kHz 0.1 VCE=10V, IC=1.0mA, f=1.0kHz 100 VCE=10V, IC=1.0mA, f=1.0kHz 1.0 VCE=5.0V, IC=100μA, RS =1.0KΩ, f=10Hz to 15.7kHz VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA VCC=3.0V, IC=10mA, IB1=IB2=1.0mA VCC=3.0V, IC=10mA, IB1=IB2=1.0mA MAX 0.200 0.85 0.95 UNITS V V V 300 4.0 8.0 12 10 400 60 4.0 35 35 200 50 MHz pF pF kΩ X10-4 μS dB ns ns ns ns ♦ Enhanced specification SOT-883L - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R1 (5-MAY 2008)