CET3904E NPN
CET3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
SOT-883L CASE
♦
♦
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
SYMBOL UNITS
Collector-Emitter Voltage
VCBO 60
VCEO
40
Emitter-Base Voltage
VEBO
6.0
V
IC
200
mA
Power Dissipation (Note 2)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
Thermal Resistance (Note 2)
♦
MARKING CODES: CET3904E: C
CET3906E: D
APPLICATIONS:
• DC-DC converters
• Battery powered devices including cell phones
and digital cameras
Power Dissipation (Note 1)
♦
♦
♦
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CET3904E
and CET3906E Low VCE(SAT) NPN and PNP
transistors, respectively, are designed for applications
where ultra small size and power dissipation are
the prime requirements. Packaged in an SOT-883L
surface mount package, these components provide
performance characteristics suitable for the most
demanding size constrained applications.
FEATURES:
• Device is Halogen Free by design
• 250mW power dissipation
• Low VCE(SAT) 0.1V TYP @ 50mA
• Small, TLP™ 1x0.4mm, SOT-883L leadless,
low profile, surface mount package
Continuous Collector Current
♦
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V
V
PD 250 mW
PD 430 mW
TJ, Tstg
-65 to +150
°C
ΘJA 500 °C/W
ΘJA 290 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
TYP
TYP
MAX
UNITS
ICEV VCE=30V, VEB=3.0V 50 nA
BVCBO
IC=10µA
60
115
90
V
BVCEO
IC=1.0mA
40 60 55 V
BVEBO
IE=10µA
6.0 7.5 7.9 V
VCE(SAT) IC=10mA, IB=1.0mA 0.057 0.050 0.100 V
VCE(SAT) IC=50mA, IB=5.0mA 0.100 0.100 0.200 V
VBE(SAT) IC=10mA, IB=1.0mA
0.65
0.75
0.75
0.85
V
VBE(SAT) IC=50mA, IB=5.0mA 0.85 0.85 0.95 V
Enhanced specification
Notes: 1) FR-4 epoxy PC board, standard mounting conditions.
2) FR-4 epoxy PC board with collector mounting pad area of 1 cm2.
R4 (15-September 2022)
CET3904E NPN
CET3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
♦
♦
♦
♦
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
TYP
TYP
MAX
UNITS
hFE
VCE=1.0V, IC=0.1mA
90
240
130
hFE
VCE=1.0V, IC=1.0mA
100
235
150
hFE
VCE=1.0V, IC=10mA
100 215 150 300
hFE
VCE=1.0V, IC=50mA
70
110
120
hFE
VCE=1.0V, IC=100mA
30
50
55
fT
VCE=20V, IC=10mA, f=100MHz
300
MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
4.0
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
12
pF
hie
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
12
kΩ
hre
VCE=10V, IC=1.0mA, f=1.0kHz
0.1
10
x10-4
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
100 400
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
60
µS
NF VCE=5.0V, IC=100µA, RS=1.0KΩ, 4.0 dB
f=10Hz to 15.7kHz
td
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 35 ns
tr
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 35 ns
ts
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 170 ns
tf
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
80
ns
Enhanced specification
SOT-883L CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODES:
CET3904E: C
CET3906E: D
R4 (15-September 2022)
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when ordering (example: 2N2222A PBFREE).
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