CET3906E

CET3904E NPN CET3906E PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CET3904E / CET3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in a Tiny Leadless Package TLP™, these components provide performance characteristics suitable for the most demanding size constrained applications. MARKING CODES: CET3904E: C CET3906E: D APPLICATIONS: • DC / DC Converters • Battery powered devices including Cell Phones and Digital Cameras SOT-883L CASE FEATURES: • Device is Halogen Free by design • 250mW Power Dissipation • Low VCE(SAT) 0.1V Typ @ 50mA • Small, TLP™ 1x0.4mm, SOT-883L Leadless, Low Profile, Surface Mount Package MAXIMUM RATINGS: (TA=25°C) Collector-Emitter Voltage Continuous Collector Current Power Dissipation (Note 1) Power Dissipation (Note 2) Operating and Storage Junction Temperature Thermal Resistance (Note 1) Thermal Resistance (Note 2) ELECTRICAL CHARACTERISTICS: SYMBOL TEST CONDITIONS ICEV VCE=30V, VEB=3.0V BVCBO IC=10µA BVCEO IC=1.0mA BVEBO IE=10µA VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=50mA, IB=5.0mA VBE(SAT) IC=10mA, IB=1.0mA VBE(SAT) IC=50mA, IB=5.0mA Enhanced specification SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJA NPN TYP 115 60 7.5 0.057 0.100 0.75 0.85 60 40 6.0 200 250 430 -65 to +150 500 290 PNP TYP 90 55 7.9 0.050 0.100 0.75 0.85 UNITS V V V mA mW mW °C °C/W °C/W ♦ Collector-Base Voltage ♦ Emitter-Base Voltage MIN 60 40 6.0 ♦ ♦ ♦ ♦ ♦ MAX 50 0.65 0.100 0.200 0.85 0.95 UNITS nA V V V V V V V Notes: (1) FR-4 epoxy PC board, standard mounting conditions (2) FR-4 epoxy PC board with collector mounting pad area of 1 cm2 R2 (4-January 2010) CET3904E NPN CET3906E PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: SYMBOL TEST CONDITIONS hFE VCE=1.0V, IC=0.1mA hFE VCE=1.0V, IC=1.0mA hFE VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=50mA hFE VCE=1.0V, IC=100mA fT VCE=20V, IC=10mA, f=100MHz Cob VCB=5.0V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz hie VCE=10V, IC=1.0mA, f=1.0kHz hre VCE=10V, IC=1.0mA, f=1.0kHz hfe VCE=10V, IC=1.0mA, f=1.0kHz hoe VCE=10V, IC=1.0mA, f=1.0kHz NF VCE=5.0V, IC=100μA, RS=1.0KΩ, f=10Hz to 15.7kHz td VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA ts VCC=3.0V, IC=10mA, IB1=IB2=1.0mA tf VCC=3.0V, IC=10mA, IB1=IB2=1.0mA Enhanced specification ♦ ♦ ♦ MIN 90 100 100 70 30 300 NPN TYP 240 235 215 110 50 PNP TYP 130 150 150 120 55 MAX UNITS 300 1.0 0.1 100 1.0 4.0 8.0 12 10 400 60 4.0 35 35 200 50 MHz pF pF kΩ X10-4 μS dB ns ns ns ns ♦ SOT-883L CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODES: CET3904E: C CET3906E: D R2 (4-January 2010) w w w. c e n t r a l s e m i . c o m