CJD122_10

CJD122 NPN CJD127 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. MARKING: FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD PD TJ, Tstg ΘJC ΘJA UNITS V V V A A mA W W °C °C/W °C/W 100 100 5.0 8.0 16 120 20 1.75 -65 to +150 6.25 71.4 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO VCE=50V ICEV VCE=100V, VBE(off)=1.5V ICEV VCE=100V, VBE(off)=1.5V, TC=125°C ICBO VCB=100V IEBO VEB=5.0V BVCEO IC=30mA 100 VCE(SAT) IC=4.0A, IB=16mA IC=8.0A, IB=80mA VCE(SAT) IC=8.0A, IB=80mA VBE(SAT) VBE(ON) VCE=4.0V, IC=4.0A hFE VCE=4.0V, IC=4.0A 1000 hFE VCE=4.0V, IC=8.0A 100 fT VCE=4.0V, IC=3.0A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=1.0MHz (CJD122) Cob VCB=10V, IE=0, f=1.0MHz (CJD127) hfe VCE=4.0V, IC=3.0A, f=1.0kHz MAX 10 10 500 10 2.0 2.0 4.0 4.5 2.8 12000 UNITS µA µA µA µA mA V V V V V 200 300 300 MHz pF pF R2 (4-January 2010) CJD122 NPN CJD127 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DPAK TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING: FULL PART NUMBER R2 (4-January 2010) w w w. c e n t r a l s e m i . c o m