CJD200

CJD200 NPN CJD210 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200, CJD210 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current amplifier applications. MARKING: FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD PD TJ, Tstg ΘJC ΘJA UNITS V V V A A A W W °C °C/W °C/W 40 25 8.0 5.0 10 1.0 12.5 1.4 -65 to +150 10 89.3 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=40V ICBO VCB=40V, TC=125°C IEBO VEB=8.0V BVCEO IC=10mA 25 VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=2.0A, IB=200mA VCE(SAT) IC=5.0A, IB=1.0A VBE(SAT) IC=5.0A, IB=1.0A VBE(ON) VCE=1.0V, IC=2.0A hFE VCE=1.0V, IC=500mA 70 hFE VCE=1.0V, IC=2.0A 45 hFE VCE=2.0V, IC=5.0A 10 fT VCE=10V, IC=100mA, f=10MHz 65 Cob VCB=10V, IE=0, f=0.1MHz (CJD200) Cob VCB=10V, IE=0, f=0.1MHz (CJD210) MAX 100 100 100 0.3 0.75 1.8 2.5 1.6 180 UNITS nA µA nA V V V V V V 80 120 MHz pF pF R2 (4-January 2010) CJD200 NPN CJD210 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS DPAK TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING: FULL PART NUMBER R2 (4-January 2010) w w w. c e n t r a l s e m i . c o m