CJD2955

CJD2955 PNP CJD3055 NPN SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD2955, CJD3055 types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package designed for high current amplifier and switching applications. MARKING: FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD PD TJ, Tstg ΘJC ΘJA 70 60 5.0 10 6.0 20 1.75 -65 to +150 6.25 71.4 UNITS V V V A A W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO ICEV ICEV ICBO ICBO IEBO BVCEO VCE(SAT) VCE(SAT) VBE(ON) hFE hFE fT VCE=30V VCE=70V, VBE(off)=1.5V VCE=70V, VBE(off)=1.5V, TC=150°C VCB=70V VCB=70V, TC=150°C VEB=5.0V IC=30mA IC=4.0A, IB=400mA IC=10A, IB=3.3A VCE=4.0V, IC=4.0A VCE=4.0V, IC=4.0A VCE=4.0V, IC=10A VCE=10V, IC=500mA, f=1.0MHz 20 5.0 2.0 60 MAX 50 20 2.0 20 2.0 500 1.1 8.0 1.8 100 UNITS µA µA mA µA mA µA V V V V MHz R3 (4-January 2010) CJD2955 PNP CJD3055 NPN SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS DPAK TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING: FULL PART NUMBER R3 (4-January 2010) w w w. c e n t r a l s e m i . c o m