CJD32C

CJD31C NPN CJD32C PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD PD TJ, Tstg ΘJC ΘJA 100 100 5.0 3.0 5.0 1.0 15 1.56 -65 to +150 8.33 80.1 UNITS V V V A A A W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL ICEO ICES IEBO BVCEO VCE(SAT) VBE(ON) hFE hFE fT hfe TEST CONDITIONS VCE=60V VCE=100V VEB=5.0V IC=30mA IC=3.0A, IB=375mA VCE=4.0V, IC=3.0A VCE=4.0V, IC=1.0A VCE=4.0V, IC=3.0A VCE=10V, IC=500mA, f=1.0MHz VCE=10V, IC=500mA, f=1.0kHz 25 10 3.0 20 50 MHz 100 1.2 1.8 MIN MAX 50 20 1.0 UNITS µA µA mA V V V R2 (4-January 2010) CJD31C NPN CJD32C PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS DPAK TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING: FULL PART NUMBER R2 (4-January 2010) w w w. c e n t r a l s e m i . c o m