CJD47

CJD47 CJD50 SURFACE MOUNT NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD47, CJD50 types are NPN Silicon Power Transistors manufactured in a surface mount package designed for high voltage applications such as power supplies and other switching applications. MARKING: FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD PD TJ, Tstg ΘJC ΘJA CJD47 350 250 5.0 1.0 2.0 600 15 1.56 -65 to +150 8.33 80.1 CJD50 500 400 UNITS V V V A A mA W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO ICEO ICES ICES IEBO BVCEO BVCEO VCE(SAT) VBE(ON) hFE hFE fT hfe VCE=150V (CJD47) VCE=300V (CJD50) VCE=350V (CJD47) VCE=500V (CJD50) VEB=5.0V IC=30mA (CJD47) IC=30mA (CJD50) IC=1.0A, IB=200mA VCE=10V, IC=1.0A VCE=10V, IC=300mA VCE=10V, IC=1.0A VCE=10V, VCE=10V, IC=200mA, f=2.0MHz IC=200mA, f=1.0kHz 250 400 MAX 200 200 100 100 1.0 UNITS µA µA µA µA mA V V 1.0 1.5 30 10 10 25 150 V V MHz R2 (4-January 2010) CJD47 CJD50 SURFACE MOUNT NPN SILICON POWER TRANSISTOR DPAK TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING: FULL PART NUMBER R2 (4-January 2010) w w w. c e n t r a l s e m i . c o m