CLL2003_10

CLL2003 SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. MARKING: CATHODE BAND SOD-80 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Average Forward Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IO IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 250 250 200 250 625 4.0 1.0 500 -65 to +200 350 UNITS V V mA mA mA A A mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IR IR BVR VF VF CT trr VR=200V VR=200V, TA=150°C IR=100μA IF=100mA IF=200mA VR=0, f=1.0 MHz IF=IR=30mA, Rec. to 3.0mA, RL=100Ω 250 MAX 100 100 1.00 1.25 5.0 50 UNITS nA μA V V V pF ns R3 (8-January 2010) CLL2003 SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE SOD-80 CASE - MECHANICAL OUTLINE MARKING: CATHODE BAND R3 (8-January 2010) w w w. c e n t r a l s e m i . c o m