CM4209

CM4209 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CM4209 is a PNP Saturated Switching Silicon Transistor designed for high speed switching applications. MARKING: FULL PART NUMBER TO-18 CASE Collector-Base Voltage Emitter-Base Voltage MAXIMUM RATINGS: (TA=25°C) Collector-Emitter Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 15 15 4.5 200 500 1.2 -65 to +200 350 146 UNITS V V V mA mW W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES VCE=8.0V ICES VCE=8.0V, TA=125°C BVCBO IC=100µA 15 BVCES BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE IC=100µA IC=3.0mA IE=100µA IC=1.0mA, IB=100µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=1.0mA, IB=100µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=0.5V, IC=1.0mA VCE=0.3V, IC=10mA VCE=0.3V, IC=10mA, TA=-55°C VCE=1.0V, IC=50mA 0.69 35 50 20 40 15 15 4.5 MAX 10 5.0 UNITS nA µA V V V V 0.15 0.18 0.60 0.80 0.86 1.5 120 V V V V V V R0 (10-June 2011) CM4209 PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX fT VCE=10V, IC=10mA, f=100MHz 850 Cob VCB=5.0V, IE=0 7.0 Cib ton toff VBE=0.5V, IC=0 VCC=1.5V, IC=10mA, IB1=1.0mA VCC=1.5V, IC=10mA, IB1=IB2=1.0mA 7.0 20 20 UNITS MHz pF pF ns ns TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (10-June 2011) w w w. c e n t r a l s e m i . c o m