CMATVS5V0

CMATVS3V3 CMATVS5V0 SURFACE MOUNT SILICON TRANSIENT VOLTAGE SUPPRESSOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMATVS3V3 Series types are Low Leakage, Fast Response TVSs packaged in a space saving SOD-923 surface mount package. These devices are designed to protect sensitive equipment against ESD damage. MARKING CODES: CMATVS3V3: E CMATVS5V0: F SOD-923 CASE APPLICATIONS: • PDAs • Memory Card Ports • Mobile Phones • Instrumentation MAXIMUM RATINGS: (TA=25°C) Peak Power Dissipation (8x20μs) ESD Voltage (IEC 61000-4-2) Operating and Storage Junction Temperature FEATURES: • Small, FEMTOmini™ 1.0 x 0.6 x 0.4mm, SOD-923 Surface Mount Package • Low Leakage Current • ESD Protection IEC 61000-4-2: Level 4 (15kV) SYMBOL PPK VESD TJ, Tstg UNITS W kV °C 80 15 -55 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=0.9V MAX @ IF=10mA (for all types) Maximum Reverse Stand-off Voltage VRWM V CMATVS3V3 CMATVS5V0 3.3 5.0 Minimum Breakdown Voltage VBR @ IT V 5.0 6.2 Test Current IT mA 1.0 1.0 Maximum Reverse Leakage Current IR @ VRWM μA 2.5 1.0 Maximum Clamping Voltage VC @ IPP V 11 12.3 Peak Pulse Current IPP A 7.0 7.0 Typical Capacitance @ 0V Bias C pF 45 40 Type R4 (5-January 2012) CMATVS3V3 CMATVS5V0 SURFACE MOUNT SILICON TRANSIENT VOLTAGE SUPPRESSOR SOD-923 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode MARKING CODES: CMATVS3V3: E CMATVS5V0: F R4 (5-January 2012) w w w. c e n t r a l s e m i . c o m CMATVS3V3 CMATVS5V0 SURFACE MOUNT SILICON TRANSIENT VOLTAGE SUPPRESSOR TYPICAL ELECTRICAL CHARACTERISTICS R4 (5-January 2012) w w w. c e n t r a l s e m i . c o m