CMBT3904E_10

CMBT3904E_10

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CMBT3904E_10 - ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS - Central Semi...

  • 详情介绍
  • 数据手册
  • 价格&库存
CMBT3904E_10 数据手册
CMBT3904E NPN CMBT3906E PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMBT3904E (NPN) and CMBT3906E (PNP) are general purpose transistors with enhanced specifications. These devices are ideal for applications where ultra small size and power dissipation are the prime requirements. Packaged in the FEMTOmini™ SOT-923 package, these transistors provide performance characteristics suitable for the most demanding size constrained applications. MARKING CODES: CMBT3904E: B CMBT3906E: G APPLICATIONS • DC / DC Converters • Voltage Clamping • Protection Circuits • Battery powered applications including: Cell Phones, Digital Cameras, Pagers, PDAs, Laptop Computers, etc. SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 40 6.0 200 100 -65 to +150 1250 UNITS V V V mA mW °C °C/W SOT-923 CASE FEATURES • Very Small Package Size • 200mA Collector Current • Low VCE(SAT) (0.1V Typ @ 50mA) • Miniature 0.8 x 0.6 x 0.4mm Ultra Low height profile FEMTOmini™ Surface Mount Package ♦ Collector-Base Voltage ♦ Emitter-Base Voltage MAXIMUM RATINGS: (TA=25°C) Collector-Emitter Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL ICEV BVCEO TEST CONDITIONS VCE=30V, VEB=3.0V IC=10µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 0.650 MIN 60 40 6.0 NPN TYP 115 60 7.5 0.057 0.100 0.750 0.850 PNP TYP 90 55 7.9 0.050 0.100 0.750 0.850 MAX 50 UNITS nA V V V ♦ BVCBO ♦ BVEBO ♦ VCE(SAT) ♦ VCE(SAT) VBE(SAT) VBE(SAT) 0.100 0.200 0.850 0.950 V V V V ♦ Enhanced specification. R1 (8-January 2010) CMBT3904E NPN CMBT3906E PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: SYMBOL TEST CONDITIONS NPN TYP 130 150 150 120 55 MHz 4.0 8.0 1.0 0.1 100 1.0 12 10 400 60 4.0 35 35 200 50 μS dB ns ns ns ns pF pF kΩ X10-4 300 PNP MAX MIN 90 100 100 70 30 300 TYP 240 235 215 110 50 UNITS ♦ hFE ♦ hFE ♦ hFE hFE fT Cob Cib hie hre hfe hoe NF td tr ts tf hFE VCE=1.0V, IC=0.1mA VCE=1.0V, IC=1.0mA VCE=1.0V, IC=10mA VCE=1.0V, IC=50mA VCE=1.0V, IC=100mA VCE=20V, IC=10mA, f=100MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, VCE=10V, IC=1.0mA, f=1.0kHz IC=1.0mA, f=1.0kHz VCE=5.0V, IC=100μA, RS =1.0kΩ, f=10Hz to 15.7kHz VCC=3.0V, VBE=0.5V, VCC=3.0V, VBE=0.5V, IC=10mA, IC=10mA, IB1=1.0mA IB1=1.0mA VCC=3.0V, IC=10mA, IB1=IB2=1.0mA VCC=3.0V, IC=10mA, IB1=IB2=1.0mA ♦ Enhanced specification. SOT-923 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODES: CMBT3904E: B CMBT3906E: G R1 (8-January 2010) w w w. c e n t r a l s e m i . c o m
CMBT3904E_10
1. 物料型号: - CMBT3904E(NPN型) - CMBT3906E(PNP型)

2. 器件简介: - 这两个型号的晶体管是通用的增强型晶体管,具有超小型尺寸和功率耗散,非常适合对尺寸有严格要求的应用。它们被封装在FEMTOmini™ SOT-923封装中,为要求严格的尺寸受限应用提供了性能特性。

3. 引脚分配: - SOT-923封装的引脚代码:1)基极 2)发射极 3)集电极

4. 参数特性: - 非常小的封装尺寸 - 集电极电流200mA - 低VCE(SAT)(0.1V典型值@50mA) - 微型0.8 x 0.6 x 0.4mm超低高度外形

5. 功能详解: - 这些晶体管适用于DC/DC转换器、电压钳位、保护电路以及包括手机、数码相机、寻呼机、PDA、笔记本电脑等在内的电池供电应用。

6. 应用信息: - DC/DC转换器 - 电压钳位 - 保护电路 - 电池供电应用,例如手机、数码相机、寻呼机、PDA、笔记本电脑等。

7. 封装信息: - SOT-923封装,尺寸参数如下(单位:英寸/毫米): - A: 0.015-0.016 / 0.39-0.41 - B: 0.004-0.010 / 0.10-0.26 - C: 0.003-0.006 / 0.08-0.14 - D: 0.002-0.006 / 0.05-0.15 - E: 0.014 / 0.35 - F: 0.005-0.009 / 0.12-0.22 - G: 0.030-0.033 / 0.75-0.85 - H: 0.035-0.043 / 0.90-1.10 - J: 0.007-0.011 / 0.17-0.27 - K: 0.022-0.026 / 0.55-0.65
CMBT3904E_10 价格&库存

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