CMDD3003_10

CMDD3003 SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD3003 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for switching applications requiring a extremely low leakage diode. MARKING CODE: 03C SOD-323 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Average Rectified Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0µs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR IO IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 180 200 600 700 2.0 1.0 250 -65 to +150 500 UNITS V mA mA mA A A mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IR VR=125V IR VR=125V, TA=150°C IR VR=180V IR VR=180V, TA=150°C BVR IR=5.0µA 200 VF IF=1.0mA 0.62 VF IF=10mA 0.72 VF IF=50mA 0.80 VF IF=100mA 0.83 VF IF=200mA 0.87 VF IF=300mA 0.90 CT VR=0, f=1.0MHz MAX 1.0 3.0 10 5.0 0.72 0.83 0.89 0.93 1.10 1.15 4.0 UNITS nA µA nA µA V V V V V V V pF R1 (8-January 2010) CMDD3003 SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE SOD-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 2) ANODE MARKING CODE: 03C R1 (8-January 2010) w w w. c e n t r a l s e m i . c o m